this is information on a product in full production. january 2015 docid018564 rev 2 1/9 stps41h100c-y automotive low drop power schottky rectifier datasheet ? production data features ? negligible switching losses ? high junction temperature capability ? good trade off between leakage current and forward voltage drop ? low leakage current ? avalanche rated ? aec-q101 qualified ? ppap c apable ? ecopack ? 2 compliant component on to-220ab description dual center tap schottky rectifier designed for high frequency miniature switched mode power supplies such as adaptors and on board dc/dc converters for automotive applications. . $ $ . ' e 3 $ . $ $ $ $ . 7 2 $ % . table 1. device summary symbol value i f(av) 2 x 20 a v rrm 100 v t j(max) 175 c v f (typ) 0.62 v www.st.com
characteristics stps41h100c-y 2/9 docid018564 rev 2 1 characteristics when the diodes 1 and 2 are used simultaneously: tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 0.58 x i f(av) + 0.0045 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage, t j = -40 c 100 v i f(rms) forward rms current 30 a i f(av) average forward current, = 0.5, t c = 150 c per diode 20 a per device 40 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 220 a p arm (1) repetitive peak avalanche power t p = 10 s, t j = 125 c 1300 w t stg storage temperature range -65 to +175 c t j operating junction temperature (2) -40 to +175 c 1. for pulse time duration derating, please refer to figure 3 . more details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the stmicroelectronics application notes an1768, ?admissible avalanche power of schottky diodes? and an2025, ?converter improvement using schottky rectifier avalanche specification?. 2. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj < 1 rth(j-a) table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case per diode 1.5 c/w per device 0.8 r th(c) coupling 0.1 table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm --10a t j = 125 c - 3 10 ma v f (2) forward voltage drop t j = 25 c i f = 20 a - - 0.80 v t j = 125 c - 0.62 0.67 t j = 25 c i f = 40 a - - 0.90 t j = 125 c - 0.70 0.76 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid018564 rev 2 3/9 stps41h100c-y characteristics 9 figure 1. average forward power dissipation versus average forward current (per diode) figure 2. average forward current versus ambient temperature ( = 0.5, per diode) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 if(av)(a) = 0.05 = 0.1 = 0.2 = 0.5 = 1 pf(av)(w) t =tp/t tp 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 175 tamb(c) rth(j-a)=rth(j-c) rth(j-a)=50c/w if(av)(a) t =tp/t tp figure 3. normalized avalanche power derating versus pulse duration figure 4. relative variation of thermal impedance junction to case versus pulse duration (per diode) w 3 ? v 3 $ 5 0 w 3 3 $ 5 0 ? v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 tp(s) = 0.5 = 0.2 = 0.1 single pulse zth(j-c)/rth(j-c) t =tp/t tp figure 5. forward voltage drop vs. forward current (per diode) figure 6. reverse leakage current versus reverse voltage applied (typical values, per diode) 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 vfm(v) tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) ifm(a) 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 102030405060708090100 vr(v) tj=150c tj=125c tj=25c tj=100c tj=75c tj=50c ir(ma)
characteristics stps41h100c-y 4/9 docid018564 rev 2 figure 7. junction capacitance vs. reverse voltage applied (typical values, per diode) figure 8. thermal resistance junction to ambient versus copper surface under tab 0.1 1.0 10.0 1 10 100 vr(v) f=1mhz vosc=30mv tj=25c c(nf) 5 w k m d ? & |